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BC337-25 PDF预览

BC337-25

更新时间: 2024-11-05 14:54:19
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 311K
描述
45V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

BC337-25 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.01
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):160
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC337-25 数据手册

 浏览型号BC337-25的Datasheet PDF文件第2页浏览型号BC337-25的Datasheet PDF文件第3页 
BC337 SERIES  
www.centralsemi.com  
SILICON  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BC337 series  
devices are silicon NPN transistors designed for general  
purpose amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
50  
45  
CBO  
CEO  
EBO  
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
800  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
83.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
V
V
V
=45V  
=30V  
=4.0V  
100  
100  
100  
nA  
CES  
CBO  
EBO  
CE  
CB  
EB  
nA  
nA  
V
BV  
BV  
BV  
I =100μA  
50  
45  
CES  
CEO  
EBO  
CE(SAT)  
BE(ON)  
FE  
C
I =10mA  
V
C
I =10μA  
5.0  
V
E
V
V
I =500mA, I =50mA  
0.7  
1.2  
V
C
B
V
=1.0V, I =300mA  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
h
h
V
V
V
V
V
V
V
=1.0V, I =100mA (BC337)  
100  
100  
160  
250  
60  
630  
250  
400  
630  
C
=1.0V, I =100mA (BC337-16)  
FE  
C
=1.0V, I =100mA (BC337-25)  
FE  
C
=1.0V, I =100mA (BC337-40)  
FE  
C
=1.0V, I =300mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
210  
15  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
R2 (6-August 2014)  

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