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BC337-25 PDF预览

BC337-25

更新时间: 2024-01-29 12:51:02
品牌 Logo 应用领域
TSC 开关晶体管
页数 文件大小 规格书
5页 275K
描述
NPN Transistor

BC337-25 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:4.27最大集电极电流 (IC):0.8 A
配置:Single最小直流电流增益 (hFE):160
JESD-609代码:e3最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)Base Number Matches:1

BC337-25 数据手册

 浏览型号BC337-25的Datasheet PDF文件第2页浏览型号BC337-25的Datasheet PDF文件第3页浏览型号BC337-25的Datasheet PDF文件第4页浏览型号BC337-25的Datasheet PDF文件第5页 
BC337-16/25/40 thru BC338-16/25/40  
Taiwan Semiconductor  
Small Signal Product  
NPN Transistor  
FEATURES  
- For switching and AF amplifier applications  
- These types are subdivided into three groups -16, -25 and -40, according to their current gain  
- Moisture sensitivity level 1  
- Driver transistor  
- Pb free and RoHS complian  
- Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
MECHANICAL DATA  
- Case: TO-92 small outline plastic package  
- Terminal: Matte tin plated, lead free,  
solderable per MIL-STD-202, Method 208 guaranteed  
- High temperature soldering guaranteed: 260°C/10s  
- Weight: 190 mg (approximately)  
TO-92  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PTOT  
UNIT  
mW  
V
Total Power dissipation  
Collector-Base Voltage  
625  
BC337  
BC338  
BC337  
BC338  
BC337  
BC338  
50  
VCBO  
30  
45  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
25  
5
5
VEBO  
Collector Current  
IC  
ICM  
800  
mA  
mA  
°C  
Peak Collector Current  
1000  
Junction and Storage Temperature Range  
TJ , TSTG  
-55 to +150  
PARAMETER  
MIN  
MAX  
SYMBOL  
UNIT  
BC337  
Collector-Base Breakdown Voltage  
BC338  
50  
30  
45  
25  
5
IC= 100μA  
IC= 2mA  
V(BR)CBO  
-
V
BC337  
Collector-Emitter Breakdown Voltage  
BC338  
V(BR)CEO  
V(BR)EBO  
ICBO  
-
-
V
BC337  
Emitter-Base Breakdown Voltage  
BC338  
IE= 100μA  
V
5
BC337  
BC338  
VCB=50V  
VCB=30V  
-
100  
100  
0.7  
1.2  
Collector Base Cutoff Current  
nA  
-
IC=500mA, IB=50mA  
VCE=1V, IC=300mA  
Collector Emitter Saturation Voltage  
Base Emitter On Voltage  
VCE(sat)  
VBE(on)  
-
V
V
-
VCE=5V, IC=10mA,  
f=50MHz  
Transition Frequency  
Output Capacitance  
fT  
100  
-
MHz  
pF  
VCB=10V, f=1MHz  
Cob  
12  
-
Current Gain Group: -16  
100  
160  
250  
250  
400  
630  
VCE= 5V,  
IC= 100mA  
-25  
-40  
hFE  
DC Current Gain  
V
VCE= 5V,  
IC= 300mA  
60  
-
Version: B14  
Document Number: DS_S1407004  

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