5秒后页面跳转
BC337-16B1G PDF预览

BC337-16B1G

更新时间: 2024-11-26 01:09:11
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
5页 275K
描述
NPN Transistor

BC337-16B1G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.58Base Number Matches:1

BC337-16B1G 数据手册

 浏览型号BC337-16B1G的Datasheet PDF文件第2页浏览型号BC337-16B1G的Datasheet PDF文件第3页浏览型号BC337-16B1G的Datasheet PDF文件第4页浏览型号BC337-16B1G的Datasheet PDF文件第5页 
BC337-16/25/40 thru BC338-16/25/40  
Taiwan Semiconductor  
Small Signal Product  
NPN Transistor  
FEATURES  
- For switching and AF amplifier applications  
- These types are subdivided into three groups -16, -25 and -40, according to their current gain  
- Moisture sensitivity level 1  
- Driver transistor  
- Pb free and RoHS complian  
- Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
MECHANICAL DATA  
- Case: TO-92 small outline plastic package  
- Terminal: Matte tin plated, lead free,  
solderable per MIL-STD-202, Method 208 guaranteed  
- High temperature soldering guaranteed: 260°C/10s  
- Weight: 190 mg (approximately)  
TO-92  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
SYMBOL  
PTOT  
UNIT  
mW  
V
Total Power dissipation  
Collector-Base Voltage  
625  
BC337  
BC338  
BC337  
BC338  
BC337  
BC338  
50  
VCBO  
30  
45  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
25  
5
5
VEBO  
Collector Current  
IC  
ICM  
800  
mA  
mA  
°C  
Peak Collector Current  
1000  
Junction and Storage Temperature Range  
TJ , TSTG  
-55 to +150  
PARAMETER  
MIN  
MAX  
SYMBOL  
UNIT  
BC337  
Collector-Base Breakdown Voltage  
BC338  
50  
30  
45  
25  
5
IC= 100μA  
IC= 2mA  
V(BR)CBO  
-
V
BC337  
Collector-Emitter Breakdown Voltage  
BC338  
V(BR)CEO  
V(BR)EBO  
ICBO  
-
-
V
BC337  
Emitter-Base Breakdown Voltage  
BC338  
IE= 100μA  
V
5
BC337  
BC338  
VCB=50V  
VCB=30V  
-
100  
100  
0.7  
1.2  
Collector Base Cutoff Current  
nA  
-
IC=500mA, IB=50mA  
VCE=1V, IC=300mA  
Collector Emitter Saturation Voltage  
Base Emitter On Voltage  
VCE(sat)  
VBE(on)  
-
V
V
-
VCE=5V, IC=10mA,  
f=50MHz  
Transition Frequency  
Output Capacitance  
fT  
100  
-
MHz  
pF  
VCB=10V, f=1MHz  
Cob  
12  
-
Current Gain Group: -16  
100  
160  
250  
250  
400  
630  
VCE= 5V,  
IC= 100mA  
-25  
-40  
hFE  
DC Current Gain  
V
VCE= 5V,  
IC= 300mA  
60  
-
Version: B14  
Document Number: DS_S1407004  

与BC337-16B1G相关器件

型号 品牌 获取价格 描述 数据表
BC337-16BK DIOTEC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC337-16-BP-HF MCC

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), NPN,
BC33716BU FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
BC33716BU ONSEMI

获取价格

NPN Bipolar Transistor
BC33716D26Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-16D26Z FAIRCHILD

获取价格

1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33716D27Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-16D27Z FAIRCHILD

获取价格

1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC33716D74Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337-16D74Z FAIRCHILD

获取价格

1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92