Datasheet > BC327

BC327

更新时间： 2024-11-28 22:39:27

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	87K
描述
Si-Epitaxial PlanarTransistors

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中文翻译

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数据手册

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BC327 数据手册

BC 327 / BC 328

PNP

General Purpose Transistors

PNP

Si-Epitaxial PlanarTransistors

Power dissipation – Verlustleistung

625 mW

Plastic case

TO-92

(10D3)

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.18 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Pinning

Standard Lieferform gegurtet in Ammo-Pack

1 = C 2 = B 3 = E

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BC 327

45 V

50 V

BC 328

25 V

30 V

Collector-Emitter-voltage

Emitter-Base-voltage

B open

B shorted - V_CES

C open

- V_CE0

- V_EB0

P_tot

- I_C

- I_CM

- I_B

T_j

5 V

Power dissipation – Verlustleistung

625 mW ¹)

800 mA

1 A

Collector current – Kollektorstrom (DC)

Peak Coll. current – Kollektor-Spitzenstrom

Base current – Basisstrom

Junction temp. – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

100 mA

150ꢀC

- 65…+ 150ꢀC

T_S

Characteristics, T_j= 25ꢀC

Kennwerte, T_j= 25ꢀC

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

Group -16

Group -25

Group -40

Group -16

Group -25

Group -40

h_FE

100

160

250

100

170

160

250

400

130

200

320

250

400

630

–

- V_CE= 1 V, - I_C= 100 mA

- V_CE= 1 V, - I_C= 300 mA

)

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

01.11.2003

中文翻译

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