Datasheet > BC327

BC327

更新时间： 2024-11-29 08:49:23

品牌	Logo	应用领域
TGS		晶体晶体管
页数	文件大小	规格书
1页	236K
描述
TO-92 Plastic-Encapsulate Transistors (PNP)

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中文翻译

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数据手册

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BC327 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

BC327/ BC328

TRANSISTOR (PNP)

TO-92

FEATURES

1. COLLECTOR

2.BASE

Power dissipation

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

3. EMITTER

Unit

Collector-Base Voltage

BC327

BC328

-50

-30

-45

-25

-5

V_CEO

Collector-Emitter Voltage BC327

BC328

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

-800

625

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

T_j

150

℃

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C= -100uA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

BC327

BC328

V_CBO

-50

-30

Collector-emitter breakdown voltage

I_C= -10mA , I_B=0

BC327

BC328

V_CEO

V_EBO

I_CBO

-45

-25

Emitter-base breakdown voltage

I_E= -10uA, I_C=0

-5

Collector cut-off current

BC327

BC328

V_CB= -45 V , I_E=0

V_CB= -25V , I_E=0

-0.1

Collector cut-off current

BC327

BC328

I_CEO

V_CE= -40 V , I_B=0

_CE= -20 V , I_B=0

V_EB= -4 V , I_C=0

-0.2

Emitter cut-off current

DC current gain

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

-0.1

V_CE=-1 V, I_C= -100mA

V_CE=-1 V, I_C= -300mA

I_C=-500mA, I_B= -50mA

I_C= -500mA, I_B=-50mA

V_CE=-1 V, I_C= -300mA

100

630

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

-0.7

-1.2

_CE= -5V, I_C= -10mA

f = 100MHz

_CB=-10V,I_E=0

f=1MHZ

Transition frequency

f_T

260

MHz

Collector Output Capacitance

Cob

CLASSIFICATION OF h_FE

Rank

100-250

250-630

Range

160-400

A,May,2011

中文翻译

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