Datasheet > BC308CRLRE

BC308CRLRE

更新时间： 2024-01-31 18:59:08

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
34页	318K
描述
TRANSISTOR 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal

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BC308CRLRE 数据手册

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol BC307, B, C

BC308C

–25

Unit

Vdc

CEO

CBO

EBO

–45

–50

–30

Vdc

–5.0

Vdc

Collector Current — Continuous

–100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

BC307,B,C

BC308C

–45

–25

—

Vdc

(BR)CEO

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

BC307,B,C

BC308C

–5.0

—

(BR)EBO

Collector–Emitter Leakage Current

CES

= –50 V, V

= –30 V, V

= –50 V, V

= –30 V, V

= 0)

BC307,B,C

BC308C

BC307,B,C

BC308C

—

–0.2

–15

–4.0

nAdc

= 0) T = 125°C

µA

REV 1

2–88

Motorola Small–Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7...34

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