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BC308CRL1 PDF预览

BC308CRL1

更新时间: 2024-11-27 03:47:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
34页 318K
描述
100mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

BC308CRL1 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
2
3
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol BC307, B, C  
BC308C  
–25  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
–45  
–50  
–30  
Vdc  
–5.0  
Vdc  
Collector Current — Continuous  
I
C
–100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = –2.0 mAdc, I = 0)  
BC307,B,C  
BC308C  
V
V
–45  
–25  
Vdc  
Vdc  
(BR)CEO  
C
B
EmitterBase Breakdown Voltage  
(I = –100 Adc, I = 0)  
BC307,B,C  
BC308C  
–5.0  
–5.0  
(BR)EBO  
E
C
Collector–Emitter Leakage Current  
I
CES  
(V  
CES  
(V  
CES  
(V  
CES  
(V  
CES  
= –50 V, V  
= –30 V, V  
= –50 V, V  
= –30 V, V  
= 0)  
= 0)  
BC307,B,C  
BC308C  
BC307,B,C  
BC308C  
–0.2  
–0.2  
–0.2  
–0.2  
–15  
–15  
–4.0  
–4.0  
nAdc  
BE  
BE  
BE  
BE  
= 0) T = 125°C  
= 0) T = 125°C  
µA  
A
A
REV 1  
2–88  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  

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