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BC308B PDF预览

BC308B

更新时间: 2024-11-25 22:27:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 44K
描述
PNP EPITAXIAL SILICON TRANSISTOR

BC308B 数据手册

 浏览型号BC308B的Datasheet PDF文件第2页浏览型号BC308B的Datasheet PDF文件第3页浏览型号BC308B的Datasheet PDF文件第4页浏览型号BC308B的Datasheet PDF文件第5页 
BC307/308/309  
Switching and Amplifier Applications  
Low Noise: BC309  
TO-92  
1. Collector 2. Base 3. Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
: BC307  
: BC308/309  
Collector-Emitter Voltage  
CES  
-50  
-30  
V
V
CEO  
: BC307  
: BC308/309  
-45  
-25  
V
V
Emitter-Base Voltage  
-5  
-100  
V
EBO  
I
Collector Current (DC)  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
mA  
mW  
°C  
C
P
500  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

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