BC184CBULK

更新时间： 2024-11-28 13:01:39

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
4页	69K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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BC184CBULK 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.65
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BC184CBULK 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

BC184

BC184B

BC184C

TO-92

Plastic Package

Amplifier Transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

V_CEO

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

V_CBO

V_EBO

I_C

Collector Current Continuous

Power Dissipation @ Ta=25ºC

Derate Above 25ºC

100

P_D

350

mW/ºC

2.8

P_D

Power Dissipation @ Tc=25ºC

Derate Above 25ºC

mW/ºC

ºC

T_j, T_stg

Operating And Storage Junction

Temperature Range

-55 to +150

THERMAL RESISTANCE

Junction to ambient

Junction to case

R_th(j-a)

R_th(j-c)

357

125

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

V_CEO

V_CBO

V_EBO

I_CBO

I_EBO

h_FE

I_C=2mA,I_B=0

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

Collector-Cut off Current

Emitter-Cut off Current

DC Current Gain

I_C=10µA.I_E=0

I_E=100µA, I_C=0

V_CB=30V,I_E=0

V_EB=4V, I_C=0

0.2

I_C=10µA,V_CE=5V

I_C=2mA,V_CE=5V

I_C=100mA*,V_CE=5V

100

240

130

BC184

800

V_CE(Sat)I_C=10mA,I_B=0.5mA

I_C=100mA,I_B=5.0mA*

V_BE(Sat)I_C=100mA,I_B=5mA*

V_BE(ON)I_C=2mA,V_CE=5V

I_C=100µA,V_CE=5V

Collector Emitter Saturation Voltage

0.07

0.2

0.25

0.6

1.2

0.7

Base Emitter Saturation Voltage

Base Emitter On Voltage

0.55

0.62

0.5

0.83

I_C=100mA,V_CE=5V*

Continental Device India Limited

Data Sheet

Page 1 of 4

12 3 4

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