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BC184B PDF预览

BC184B

更新时间: 2024-02-04 20:07:08
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 126K
描述
TRANSISTOR (NPN)

BC184B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.41最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):130JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):225极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzBase Number Matches:1

BC184B 数据手册

  
RoHS  
BC184-B-C  
BC184, B, C  
TRANSISTOR (NPN)  
TO-92  
FEATURES  
Power dissipation  
PCM:  
Collector current  
ICM:  
1. COLLECTOR  
2. BASE  
0.35  
0.1  
45  
W (Tamb=25)  
A
V
3. EMITTER  
Collector-base voltage  
V(BR)CBO  
:
1 2 3  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=10µA, IE=0  
IC= 2mA , IB=0  
IE=100µA. IC=0  
VCB=30V, IE=0  
VCE=30V, IB=0  
VEB=4 V, IC=0  
MIN  
45  
30  
6
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
15  
0.1  
15  
nA  
µA  
nA  
ICEO  
Collector cut-off current  
IEBO  
Emitter cut-off current  
DC current gain  
BC184  
BC184B  
BC184C  
240  
240  
450  
900  
500  
900  
hFE(1)  
VCE=5V, IC= 2mA  
VCE(sat)  
VBE(sat)  
IC=100mA, IB= 5mA  
IC= 100mA, IB=5mA  
0.6  
1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE= 5V, IC= 10mA  
150  
MHz  
Transition frequency  
f T  
f = 100MHz  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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