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BC182ZL1 PDF预览

BC182ZL1

更新时间: 2024-11-07 19:19:15
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
3页 133K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BC182ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.38其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):80
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC182ZL1 数据手册

 浏览型号BC182ZL1的Datasheet PDF文件第2页浏览型号BC182ZL1的Datasheet PDF文件第3页 
ON Semiconductort  
BC182  
BC182A  
BC182B  
Amplifier Transistors  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
BC182  
50  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
6.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
1
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
CASE 29–11, STYLE 17  
TO–92 (TO–226AA)  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
COLLECTOR  
1
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
2
R
q
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 2.0 mA, I = 0)  
V
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
50  
C
B
Collector–Base Breakdown Voltage  
(I = 10 mA, I = 0)  
60  
C
E
Emitter–Base Breakdown Voltage  
(I = 100 mA, I = 0)  
6.0  
V
E
C
Collector Cutoff Current  
(V = 50 V, V = 0)  
I
nA  
nA  
CBO  
0.2  
15  
15  
CB  
BE  
Emitter–Base Leakage Current  
(V = 4.0 V, I = 0)  
I
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
190  
Publication Order Number:  
May, 2001 – Rev. 2  
BC182/D  

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