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BC107C PDF预览

BC107C

更新时间: 2024-01-17 21:21:30
品牌 Logo 应用领域
COMSET 晶体音频放大器晶体管
页数 文件大小 规格书
3页 81K
描述
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

BC107C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.67
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):110
JEDEC-95代码:TO-18JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC107C 数据手册

 浏览型号BC107C的Datasheet PDF文件第2页浏览型号BC107C的Datasheet PDF文件第3页 
NPN BC107 – BC108 – BC109  
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS  
The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18  
metal package.  
They are suitable for use in drive audio stages, low-noise input audio stages and as low power,  
high gain general purpose transistors.  
The complementary PNP are BC177, BC178 and BC179.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
BC107  
BC108  
BC109  
Unit  
VCEO  
VCBO  
VEBO  
IC  
ICM  
PD  
Collector-Emitter Voltage (IB =0)  
Collector-Base Voltage (IE =0)  
Emitter-Base Voltage (IC =0)  
Collector Current  
45  
50  
6
20  
30  
5
100  
200  
20  
30  
5
V
V
V
mA  
mA  
mW  
°C  
°C  
Collector Peak Current  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
300  
175  
TJ  
TStg  
Storage Temperature range  
-65 to +150  
ELECTRICAL CHARACTERISTICS  
Tj=25°C unless otherwise specified  
Test Condition(s)  
Symbol  
Ratings  
Min  
Typ  
Max  
Unit  
BC107  
BC108  
BC109  
BC107  
BC108  
BC109  
BC107  
BC108  
BC109  
BC107  
BC108  
BC109  
BC107  
BC108  
BC109  
BC107  
BC108  
BC109  
V
IE = 0  
CB = 20 V  
-
-
-
-
15  
nA  
ICBO  
Collector Cutoff Current  
VCB = 20 V  
IE = 0 V  
Tj = 150°C  
-
-
15  
50  
µA  
nA  
V
VEB = 5 V  
IEBO  
Emitter Cutoff Current  
IC = 0  
45  
20  
20  
50  
30  
30  
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter  
Breakdown Voltage  
IC = 10 mA  
IB = 0  
VCEO  
VCBO  
VEBO  
Collector-Base  
Breakdown Voltage  
IC = 10 µA  
VBE = 0  
V
Emitter-Base Breakdown IE = 10 µA  
Voltage IC = 0  
5
-
-
V
25/09/2012  
COMSET SEMICONDUCTORS  
1/3  

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