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BB535 PDF预览

BB535

更新时间: 2024-10-27 22:27:19
品牌 Logo 应用领域
乐山 - LRC 二极管变容二极管
页数 文件大小 规格书
3页 83K
描述
Silicon Variable Capacitance Diode

BB535 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N标称二极管电容:18.7 pF
二极管类型:VARIABLE CAPACITANCE DIODE最大重复峰值反向电压:35 V
子类别:Varactors表面贴装:YES
Base Number Matches:1

BB535 数据手册

 浏览型号BB535的Datasheet PDF文件第2页浏览型号BB535的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Silicon Variable Capacitance Diode  
• For UHF and TV/TR tuners  
BB 535  
• Large capacitance ratio, low series resistance  
1
1
2
2
CATHODE  
ANODE  
CASE 477– 02, STYLE 1  
SOD– 323  
MAXIMUMRATINGS  
Parameter  
Symbol  
Value  
Unit  
V
Diode Reverse Voltage  
Peak reverse voltage ( R  
Forward Current  
V
30  
35  
R
>
5k)  
V RM  
I F  
V
20  
mA  
°C  
Operating temperature range  
Storage temperature  
T op  
T stg  
- 55 ~ + 125  
- 55 ... + 150  
°C  
THERMALRESISTANCE  
Parameter  
Symbol  
Value  
Unit  
Junction - ambient  
R thJA  
<
450  
K/W  
DCCHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse current  
IR  
nA  
V R = 30 V, T A = 25 °C  
V R = 30 V, T A = 85 °C  
10  
200  
ACCHARACTERISTICS  
Diode capacitance  
V R = 1 V, f = 1 MHz  
V R = 2 V, f = 1 MHz  
V R = 25 V, f = 1 MHz  
V R = 28 V, f = 1 MHz  
Capacitance ratio  
C T  
pF  
17.5  
14.01  
2.05  
1.9  
18.7  
15  
20  
16.1  
2.4  
2.24  
2.1  
2.3  
C T2 / C T25  
C T1 / C T28  
C T / C T  
r s  
V R = 2 V, V R = 25 V, f = 1 MHz  
Capacitance ratio  
6
8.2  
6.7  
8.9  
7.5  
9.8  
2.5  
V R = 1 V, V R = 28 V, f = 1 MHz  
Capacitance matching  
V R = 1 ... 28 V, f = 1 MHz  
Series resistance  
%
V R = 3 V, f = 470 MHz  
Series inductance  
0.55  
2
0.65  
L s  
nH  
S6–1/3  

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