Datasheet > BB2110DI

BB2110DI

更新时间： 2024-10-17 22:27:19

品牌	Logo	应用领域
其他 - ETC		动态存储器双倍数据速率
页数	文件大小	规格书
4页	94K
描述
DDR SDRAM TERMINATOR NETWORKS.

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数据手册

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BB2110DI 数据手册

4200 Bonita Place, Fullerton, CA 92635

BB1110TB, BB1110B AND BB2110DI

DDR SDRAM TERMINATOR NETWORKS.

DESCRIPTION

This “BB” family of networks is for terminating SSTL_2 Class I and

Class II systems, such as DDR SDRAM. These specialty networks

employ solder balls for surface mount flip chip attachment. Their

unique construction yields extremely low capacitance and inductance

parasitics making them ideal for high-speed bus speeds.

FEATURES

•

18 Bit SSTL_2 Termination Sets.

Compliant to JEDEC Std. 8-9B.

Superior High Frequency Performance.

Minimal stray capacitance and inductance are achieved by placing resistors and BGA

termination on the same side of ceramic substrate.

•

The device can be easily surface mounted using automatic Pick and

Place equipment.

ELECTRICAL

PARAMETER (Maximum)

Resistance, Nominal

Absolute Tolerance

LIMIT

UNITS

Ω

Various

Temperature Coefficient of

Resistance

200

ppm/°C

Interlead Capacitance, Maximum 0.1

°C

Operation Temperature

-55 to 125

Power Rating (per package)

Watt

Schmatic

12 3 4

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