Datasheet > BB1A4M-A

BB1A4M-A

更新时间： 2024-10-18 20:57:15

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BB1A4M-A 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-PSIP-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.84
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.7 A
集电极-发射极最大电压：	25 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	135	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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型号	品牌	获取价格	描述	数据表
BB1F3P	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1F3P-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BB1F3P-A	RENESAS	获取价格	BB1F3P-A
BB1J3P	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1J3P-A	RENESAS	获取价格	700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
BB1L2Q	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1L2Q-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BB1L2Q-A	RENESAS	获取价格	BB1L2Q-A
BB1L3N	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1L3N-A	RENESAS	获取价格	BB1L3N-A