BB1A4M

更新时间： 2024-10-17 21:55:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关小信号双极晶体管
页数	文件大小	规格书
6页	106K
描述
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BB1A4M 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	IN-LINE, R-PSIP-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.92	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：	0.7 A	集电极-发射极最大电压：	25 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	135
JESD-30 代码：	R-PSIP-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

BB1A4M 数据手册

DATA SHEET

COMPOUND TRANSISTOR

BB1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

The BB1 Series is an N type small signal transistor and enables the reduction of component counts and

downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

appliances and OA equipments such as VCRs and TVs.

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

Up to 0.7 A current drive available

On-chip bias resistor

Low power consumption during drive

QUALITY GRADES

•

Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation

to know the specification of quality grade on the devices and its

recommended applications.

Electrode Connection

1. Emitte (E)

2. Collector (C)

3. Base (B)

BB1 SERIES LISTS

R¹(KΩ)

−

R²(KΩ)

Products

BB1A4A

BB1L2Q

BB1A3M

BB1F3P

BB1J3P

BB1L3N

BB1A4M

0.47

1.0

4.7

1.0

2.2

3.3

4.7

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D11739EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

下载PDF

与BB1A4M相关器件

型号	品牌	获取价格	描述	数据表
BB1A4M-A	NEC	获取价格	暂无描述
BB1A4M-A	RENESAS	获取价格	BB1A4M-A
BB1F3P	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1F3P-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BB1F3P-A	RENESAS	获取价格	BB1F3P-A
BB1J3P	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1J3P-A	RENESAS	获取价格	700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
BB1L2Q	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1L2Q-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
BB1L2Q-A	RENESAS	获取价格	BB1L2Q-A

与BB1A4M相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

11
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

19
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

28
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

23

产品中心

服务支持

精选活动

关于我们

帮助中心

BB1A4M

BB1A4M 技术参数

BB1A4M 数据手册

与BB1A4M相关器件

与BB1A4M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BB1A4M

BB1A4M 技术参数

BB1A4M 数据手册

与BB1A4M相关器件

与BB1A4M相关文章

您还可以找

您在本页遇到什么问题？