Datasheet > BB199

BB199

更新时间： 2024-10-18 06:41:31

品牌	Logo	应用领域
恩智浦 - NXP		二极管变容二极管石英晶振压控振荡器
页数	文件大小	规格书
8页	184K
描述
Variable capacitance diode for VCO and VCXO Small plastic SMD package

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

BB199 技术参数

BB199

Variable capacitance diode for VCO and VCXO

Rev. 1 — 1 December 2010

Product data sheet

1. Product profile

1.1 General description

The BB199 is a low voltage variable capacitance diode for the Voltage Controlled

Oscillator (VCO) and Voltage Controlled Crystal Oscillator (VCXO) applications.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Small plastic SMD package

Very low operating voltage (1 V to 4 V)

Large capacitance ratio (C_d(0V5)/C_d(2V)= 2.8 minimum)

Good capacitor-voltage (C-V) linearity

Very low series resistance allowing high Q performance.

1.3 Applications

Communication equipment

Voltage Controlled Oscillators

2. Pinning information

Table 1.

Pinning

Description

cathode

Simplified outline

Graphic symbol

[1]

anode

sym008

[1] The marking bar indicates the cathode.

12 3 4 5 6 7 8

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
BB1A3M	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1A3M-A	RENESAS	获取价格	700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
BB1A4A	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1A4A-A	NEC	获取价格	暂无描述
BB1A4A-A	RENESAS	获取价格	BB1A4A-A
BB1A4M	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch
BB1A4M	RENESAS	获取价格	700mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR
BB1A4M-A	NEC	获取价格	暂无描述
BB1A4M-A	RENESAS	获取价格	BB1A4M-A
BB1F3P	NEC	获取价格	COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switch