Datasheet > BAW76

BAW76

更新时间： 2024-09-26 18:09:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	96K
描述
Reverse Voltage Vr : 75 V;Forward Current Io : 150 mA;Max Surge Current : 0.5 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 0.1 uA;Recovery Time : 2 ns;Package / Case : DO-35;Mounting Style : Through Hole;Notes : IFSM@t = 1.0us

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BAW76 数据手册

BAW76

FAST SWITCHING SURFACE MOUNT DIODES

FEATURES

Silicon epitaxial planar diode

DO-35 Package,glass case

Fast switching Speed

500 mW power dissipation

Polarity: Color band denotes cathode

DO-35

* P/N suffix V means AEC-Q101 qualified, e.g:BAW76V

(

)

.022 0.55

DIA.

(

.018 0.45

(

)

1.02 26.0

MIN.

(

)

.141 3.6

(

)

.118 3.6

(

)

.083 2.1

DIA.

(

)

1.6

.063

(

)

1.02 26.0

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

ꢀꢁ

UNITS

Peak Reverse Voltage

VRM

VDC

IꢃꢄAVꢅ

IFSM

PTOT

Maximum DC Blocking Voltage

ꢁꢂ

Maximum Average Forward Current at TA=25^OC And f > 50Hz

Surge Forward Current at t < 1s and TJ=25^OC

Power Dissipation at TA= 25^OC

ꢆꢁꢂ

500

Maximum Forward Voltage at IF=ꢆꢂ0mA

Maximum Leakage Currentꢇ

at V^R=ꢁꢂV

ꢆꢂꢂ

ꢆꢂ0

ꢀA

at V^R=ꢁ0V ,TJ= 150^OC

Maximum Capacitance at VF=VR=0

t_rr

Maximum Reverse Recovery Time From

I^F=-IR =10mA to IRR=-1mA ,VR=6V RL=100 ꢁ

ꢈ

Typical Maximum Thermal Resistance

RꢂJA

350

^OC / W

^OC

Junction Temperature and Storage Temperature Range

TJ,TS

-65 to +175

2022-12/09

REV:O

ꢀ

12 3 4

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