5秒后页面跳转
BAV99BRW-TP PDF预览

BAV99BRW-TP

更新时间: 2024-09-23 21:14:11
品牌 Logo 应用领域
美微科 - MCC 测试光电二极管
页数 文件大小 规格书
3页 276K
描述
Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

BAV99BRW-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:1.06配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.715 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:4端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向电流:2.5 µA最大反向恢复时间:0.004 µs
反向测试电压:75 V子类别:Signal Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAV99BRW-TP 数据手册

 浏览型号BAV99BRW-TP的Datasheet PDF文件第2页浏览型号BAV99BRW-TP的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BAV99BRW  
Features  
·
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
200mW 75Volt  
Plastic-Encapsulate  
Diode  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
Low Current Leakage  
MAKING:KGJ  
Low Cost  
Small Outline Surface Mount Package  
SOT-363  
G
Maximum Ratings  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
C
B
A
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
VR  
IO  
75V  
M
K
Average Rectified  
Output Current  
Peak Forward  
150mA  
J
D
L
IFSM  
1.0A  
t=1s, Non-Repetitive  
t=1us, Non-Repetitive  
Surge Current  
2.0A  
Power Dissipation  
PTOT  
200mW  
DIMENSIONS  
715mV IFM = 1mA;  
855mV IFM = 10mA;  
1000mV IFM = 50mA;  
Maximum  
Instantaneous  
Forward Voltage  
INCHES  
MM  
VF  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
1250mV  
IFM = 150mA;  
B
C
D
G
H
J
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
IR  
VR=75V  
VR=20V  
2.5µA  
0.025µA  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
L
M
CJ  
Trr  
2.0pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=IR=10mA  
Irr = 0.1*IR  
Rc=100Ω  
www.mccsemi.com  
Revision: C  
2014/08/22  
1 of 3  

BAV99BRW-TP 替代型号

型号 品牌 替代类型 描述 数据表
BAV99BRW MCC

功能相似

200mW 75Volt Plastic-Encapsulate Diode
BAV99BRW-7-F DIODES

功能相似

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

与BAV99BRW-TP相关器件

型号 品牌 获取价格 描述 数据表
BAV99C KEC

获取价格

SILICON EPITAXIAL PLANAR DIODE
BAV99C_15 KEC

获取价格

SILICON EPITAXIAL PLANAR DIODE
BAV99D SWST

获取价格

小信号开关二极管
BAV99D HOTTECH

获取价格

SOT-23
BAV99-D0RF TSC

获取价格

225mW SMD Switching Diode
BAV99-D0RFG TSC

获取价格

225mW SMD Switching Diode
BAV99D87Z ONSEMI

获取价格

DIODE 0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN, Signal Diode
BAV99-D87Z ONSEMI

获取价格

(Legacy Fairchild) 200 mA 70 V High Conductance Ultra-Fast Switching Diode, 10000-REEL
BAV99DPT CHENMKO

获取价格

FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 215 mAmpere
BAV99DW LGE

获取价格

Surface Mount Fast Switching Diodes