BAV99

更新时间： 2024-09-22 22:39:27

品牌	Logo	应用领域
德欧泰克 - DIOTEC		二极管光电二极管 PC
页数	文件大小	规格书
2页	65K
描述
Surface mount Small Signal Double-Diodes

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中文翻译

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数据手册
替代型号

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BAV99 数据手册

BAV99

Small Signal Si-Diodes

Surface mount Small Signal Double-Diodes

Kleinsignal-Doppel-Dioden für die Oberflächenmontage

Version 2004-04-05

Power dissipation – Verlustleistung

310 mW

70 V

2.9^±0.1

Repetitive peak reverse voltage

1.1

0.4

Periodische Spitzensperrspannung

Type

Code

Plastic case

SOT-23

Kunststoffgehäuse

(TO-236)

1.9

Weight approx. – Gewicht ca.

0.01 g

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = A1 2 = K1/A2 3 = K2

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

BAV99

per diode / pro Diode

I_FAV

Max. average forward current (dc)

Dauergrenzstrom

200 mA ¹)

300 mA ¹)

Repetitive peak forward current

Periodischer Spitzenstrom

I_FRM

Peak forward surge current

Stoßstrom-Grenzwert

t_p≤ 1 s

t_p≤ 1 ms

t_p≤ 1 µs

I_FSM

0.5 A

1 A

2 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

V_RRM

70 V

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

150°C

T_S

- 55…+ 150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Forward voltage - Durchlaßspannung ²)

I_F= 1 mA

V_F

< 715 mV

< 855 mV

< 1 V

I_F= 10 mA

I_F= 50 mA

I_F= 150 mA

< 1.25 V

Leakage current - Sperrstrom ²)

V_R= 25 V

V_R= 70 V

I_R

< 30 nA

2.5 µA

T_j= 25°C

V_R= 25 V

V_R= 70 V

I_R

< 30 µA

< 50 µA

T_j= 150°C

)

Mounted on P.C. board with 25 mm²copper pads at each terminal

Montage auf Leiterplatte mit 25 mm²Kupferbelag (Lötpad) an jedem Anschluß

Tested with pulses t_p= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t_p= 300 µs, Schaltverhältnis ≤ 2%

中文翻译

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BAV99 替代型号

型号	品牌	替代类型	描述	数据表
BAV70	DIOTEC	完全替代	Surface mount Small Signal Double-Diodes
BAV70LT3G	ONSEMI	功能相似	Dual Switching Diode Common Cathode
BAV70LT1G	ONSEMI	功能相似	Dual Switching Diode Common Cathode

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