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BAV99 PDF预览

BAV99

更新时间: 2024-09-22 22:39:27
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关光电二极管PC
页数 文件大小 规格书
2页 83K
描述
350mW 75Volt Dual Series Switching Diode

BAV99 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.03其他特性:LOW LEAKAGE CURRENT
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.855 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:1 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAV99 数据手册

 浏览型号BAV99的Datasheet PDF文件第2页 
M C C  
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BAV99  
Features  
·
·
·
Low Current Leakage  
Low Cost  
350mW 75Volt  
Dual Series  
Small Outline Surface Mount Package  
Switching Diode  
C/A  
Pin Configuration  
Top View  
A 7  
SOT-23  
A
A
C
D
Maximum Ratings  
B
C
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
F
E
Maximum Thermal Resistance; 357K/W Junction To Ambient  
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Reverse Voltage  
Average Rectified  
Output Current  
Power Dissipation  
Peak Forward Surge  
Current  
VR  
IO  
75V  
150mA  
DIMENSIONS  
MM  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
PTOT  
IFSM  
350mW  
1.0A  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
t=1s,Non-Repetitive  
Maximum  
F
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
855mV IFM = 10mA;  
TJ = 25°C*  
G
H
J
.085  
.37  
VR=75Volts  
TJ = 25°C  
TJ = 150°C  
K
2.5mA  
50mA  
Suggested Solder  
Pad Layout  
.031  
.800  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
CJ  
Trr  
2.0pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
.035  
.900  
VR = 0V  
.079  
2.000  
inches  
mm  
RL=500W  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
.037  
.950  
.037  
.950  
www.mccsemi.com  

BAV99 替代型号

型号 品牌 替代类型 描述 数据表
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