Datasheet > BAV756SDW

BAV756SDW

更新时间： 2024-09-25 17:01:19

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
4页	201K
描述
小信号开关二极管

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BAV756SDW 数据手册

BAV756SDW

Silicon Epitaxial Planar Switching Diode

Features

• High speed

• High switching speed

1. A1 2. C1 3. CA

4. C2 5. A2 6. CC

注：脚位紧邻编带圆孔侧(即与常规上带方向相反)

SOT-363 Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

Continuous Forward Current

Single Diode Loaded

All Diodes Loaded

250

100

I_F

Repetitive Peak Forward Current

I_FRM

500

Non-Repetitive Peak Forward Surge Current

at t = 1 µs

at t = 1 ms

at t = 1 s

0.5

I_FSM

Power Dissipation

P_D

T_j

350

℃

Operating Junction Temperature Range

Storage Temperature Range

- 55 to + 150

T_stg

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

357

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 4

Dated: 11/12/2023 Rev: 01

12 3 4

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