Datasheet > BAV756DW

BAV756DW

更新时间： 2024-11-22 14:55:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1485K
描述
SOT-363

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中文翻译

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数据手册

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BAV756DW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

BAV756DW

SWITCHING DIODE

SOT-363

FEATURES

Fast Switching Speed

Ultra-Small Surface Mount Package

For General Purpose Switching Applications

High Conductance

MAKING: KCA

Soliddot = Pin1 indicate.

KCA

Soliddot = Green molding compound device.

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

300

150

Forward Continuous Current

I_FM

I_O

Average Rectified Output Current

I_FSM

Non-Repetitive Peak Forward Surge Current @ t = 8.3ms

200

625

Power Dissipation

P_D

℃/W

℃

Thermal Resistance From Junction to Ambient

Operation Junction and Storage Temperature Range

R_θJA

T_J,T_STG

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V_(BR)

I_R= 2.5µA

V_R=75V

2.5

µA

Reverse voltage leakage current

Forward voltage

I_R

V_R=20V

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

0.025

715

855

1000

1250

V_F

V_R=0, f=1MHz

Total capacitance

C_tot

t_rr

I_F=I_R=10mA,I_rr=0.1×I_R,

R_L=100Ω

Reveres recovery time

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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