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BAV70DW PDF预览

BAV70DW

更新时间: 2024-11-20 08:48:59
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关光电二极管
页数 文件大小 规格书
3页 246K
描述
200mW Switching Diodes 75 Volts

BAV70DW 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:ULTRA SMALL, PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.09
配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:4
端子数量:6最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:75 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAV70DW 数据手册

 浏览型号BAV70DW的Datasheet PDF文件第2页浏览型号BAV70DW的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAV70DW  
Micro Commercial Components  
Features  
Fast switching speed  
200mW  
Switching Diodes  
75 Volts  
Ultra-Small surface mount package  
For general purpose switching applications  
High conductance  
Mechanical Data  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
SOT-363  
x
Marking Code: KJA  
G
·
·
MSL Rating 1  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
C
B
A
H
Maximum Ratings  
Symbol  
VRM  
Rating  
Rating  
100  
Unit  
V
Non-Repetitive Peak Reverse Voltage  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
M
K
VRRM  
VRWM  
VR  
J
75  
V
D
L
VR(RMS)  
IFM  
IO  
RMS Reverse Voltage  
53  
300  
150  
V
mA  
mA  
Forward Continuous Current  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
@ t=1.0us  
DIMENSIONS  
IFSM  
2.0  
1.0  
A
INCHES  
MM  
@ t=1.0s  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
PD  
RJA  
Power Dissipation  
Thermal Resistance Junction to Ambient Air  
200  
625  
mW  
R/W  
R
B
C
D
G
H
J
TJ  
Junction Temperature  
-55 to +150  
-55 to +150  
.026  
0.65Nominal  
TSTG  
Storage Temperature  
R
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
Symbol  
Parameter  
Reverse Breakdown Voltage  
(IR=2.5IAdc)  
Min  
Typ  
Max  
Units  
L
M
V(BR)R  
75  
---  
---  
V
Forward Voltage (1)  
IF=1.0mAdc  
---  
---  
---  
---  
---  
---  
---  
---  
0.715  
0.855  
1.0  
VF  
IF=10mAdc  
IF=50mAdc  
V
IF=150mAdc  
1.25  
Leakage Current (1)  
(VR=75Vdc)  
---  
---  
---  
---  
---  
---  
---  
---  
2.5  
50  
30  
25  
uA  
uA  
uA  
nA  
(VR=75Vdc, Tj=150R)  
(VR=25Vdc, Tj=150R)  
(VR=20Vdc)  
IR  
Junction Capacitance  
(VR=0, f=1.0MHz)  
Reverse Recovery Time  
(IF=10mA, IR=10mA, Irr=0.1 x IR  
RL=100OHMS)  
Cj  
trr  
---  
---  
2.0  
pF  
---  
---  
4.0  
ns  
*(1) Short duration test pulse to minimize self-heating effect.  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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