Datasheet > BAV70

BAV70

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
MERITEK		/
页数	文件大小	规格书
3页	408K
描述
BAV70 \| Fast Switch Diodes SOT-23 Package

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中文翻译

获取价格

数据手册

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BAV70 数据手册

Fast Switch Diodes

SOT-23Package

BAV70

FEATURE

•

Power Dissipation: 350mW

Low Forward Voltage

200mA Average Rectified Current

Very High Switching Speed

MECHANICAL DATA

•

Case: SOT-23, Molded Plastic

•

Terminals: Solderable per MIL-STD, Method 2026

MAXIMUM RATINGS

Parameter

Symbol

Value

100

Units

Non-Repetitive Peak Reverse Voltage

Reverse Voltage

V_RRM

V_R

Average Forward Current

I_F(AV)

200

t = 1μs

Non-Repetitive Peak Forward Surge Current

I_FSM

t = 1s

Power Dissipation

P_TOT

R_ϴJA

350

°C/W

°C

Typical Thermal Resistance from Junction to Ambient

Operating Junction and Storage Temperature Range

357

T_J,T_STG

-55~+150

ELECTRICAL CHARACTERISTICS

Parameter

Conditions

Symbol

V_(BR)R

Min

Max

Unit

Reverse Breakdown Voltage

I_R= 100μA

I_F= 1mA

715

855

1000

1250

I_F= 10mA

Forward Voltage

V_F

I_F= 50mA

I_F= 150mA

V_R=20V

µA

V_R=75V

2.5

Reverse Leakage Current

I_R

V_R=25V, T_J=150°C

V_R=75V, T_J=150°C

V_R= 0V, f=1MHz

I_F=10mA, V_R= 6V, I_rr= 0.1xI_R, R_L=100Ω

Total Capacitance

C_d

t_rr

Reverse Recovery Time

Note:

1. T_A= 25°C unless otherwise specified.

2. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

Rev. 4b 02/01/24

Meritek Electronics Corporation | www.meritekusa.com

12 3

中文翻译

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