BAV19W-Q1 THRU BAV21W-Q1
200mA Surface Mount Switching
Diode-120V-250V
Features
Package outline
• Fast speed switching.
SOD-123
• For general purpose switching application.
• High conductance.
• Silicon epitaxial planar chip
• Lead-free parts meet RoHS requirments.
0.110(2.80)
0.098(2.50)
Compliant to Halogen-free
•
• Suffix "-Q1" for AEC-Q101
0.053(1.35)
0.037(0.95)
Mechanical data
• Epoxy:UL94-VO rated flame retardant
• Case : Molded plastic, SOD-123
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.152(3.85)
0.140(3.55)
• Polarity : Indicated by cathode band
• Mounting Position : Any
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
VRM
UNIT
V
BAV19W-Q1 BAV20W-Q1 BAV21W-Q1
Non-repetitive peak reverse voltage
120
100
200
150
250
200
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
V
VRRM
VRRWM
V
IFM
IO
Forward Continous Current (1)
mA
mA
400
200
Average rectified output current(1)
@t = 1.0 ms
@t = 1.0 s
2.5
0.5
Non-repetitive peak forward surge current
IFSM
A
PD
Power dissipation
250
mW
oC/W
Typical Thermal resistance
Operating temperature
Storage temperature
Junction to ambient air(1)
RθJA
500
oC
-55 ~ +150
-65 ~ +150
TJ
TSTG
oC
V
I = 100 mA
IFF = 200 mA
1.0
VF
IR
Maximum Forward voltage
Maximum Reverse leakage
1.25
@rated DC blocking voltage, TJ=25°C
nA
uA
100
15
TJ=100°C
Maximum Total capacitance
VR = 1.0 V , f = 1.0MHz
CJ
trr
pF
ns
5.0
50
Maximum Reverse recovery time
IF = IR = 30mA , IRR = 0.1 X IR , RL = 100OHM
Note 1. Valid provided that electrodes are kept at ambient temperature.
http://www.anbonsemi.com
TEL:+86-755-23776891
FAX:+86-755-81482182
Document ID
AS-1120015
Issued Date
2003/03/08
Revised Date
Revision
Page.
2012/05/16
D
3
Page 1