BAV19W, BAV20W, BAV21W
www.vishay.com
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
click logo to get started
DESIGN SUPPORT TOOLS
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 m tape), 15K/box
PARTS TABLE
TYPE
TYPE
CIRCUIT
PART
ORDERING CODE
REMARKS
Tape and reel
Tape and reel
Tape and reel
DIFFERENTIATION
MARKING
CONFIGURATION
BAV19W-E3-08 or BAV19W-E3-18
BAV19W-HE3-08 or BAV19W-HE3-18
BAV19W
BAV20W
BAV21W
V
V
V
R = 100 V
R = 150 V
R = 200 V
A8
A9
AA
Single
Single
Single
BAV20W-E3-08 or BAV20W-E3-18
BAV20W-HE3-08 or BAV20W-HE3-18
BAV21W-E3-08 or BAV21W-E3-18
BAV21W-HE3-08 or BAV21W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
100
UNIT
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
VR
V
V
Continuous reverse voltage
VR
150
VR
200
V
VRRM
VRRM
VRRM
IF
120
V
Repetitive peak reverse voltage
DC Forward current (1)
200
V
250
V
250
mA
Rectified current (average) half wave
IF(AV)
200
mA
rectification with resist. load (1)
Repetitive peak forward current (1)
Surge forward current
Power dissipation (1)
f 50 Hz, = 180°
t < 1 s, Tj = 25 °C
IFRM
IFSM
Ptot
625
1
mA
A
410
mW
Rev. 1.6, 23-Feb-18
Document Number: 85725
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000