Datasheet > BAV21W-G

BAV21W-G

更新时间： 2024-11-18 12:56:07

品牌	Logo	应用领域
TSC		二极管开关光电二极管高压
页数	文件大小	规格书
2页	138K
描述
High Voltage Fast Switching Diode

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中文翻译

获取价格

数据手册

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BAV21W-G 数据手册

BAV19W-G/BAV20W-G/BAV21W-G

CREAT BY

Taiwan Semiconductor

Small Signal Product

High Voltage Fast Switching Diode

FEATURES

- Fast switching device(Trr<50nS)

- Surface device type mounting

- Moisture sensitivity level 1

- Low reverse leakage

- Pb free version and RoHS compliant

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

SOD-123

MECHANICAL DATA

- Case : Bend lead SOD-123 small outline plastic package

- Terminal : Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed : 260°C/10s

- Polarity : Indicated by cathode band

- Weight : 10.5 ± 0.5 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)

VALUE

UNITS

PARAMETER

SYMBOL

BAV19W-G BAV20W-G BAV21W-G

V_R

V_RM

P_D

Reverse voltage

100

150

250

Peak reverse voltage

120

200

250

Power dissipation

500

I_O

Average rectified output current

Repetitive peak forward current

200

I_FM

400

I_FSM

T_J, T_STG

Non-repetitive peak forward surge current

Junction and Storage Temperature Range

2.5

@ tp=1.0ms; TA=25℃

^oC

-65 to +150

PARAMETER

SYMBOL

MIN

MAX

UNITS

BAV19W-G

120

I_R=100uA

V_BR

Reverse voltage

BAV20W-G

BAV21W-G

BAV19W-G

BAV20W-G

BAV21W-G

I_F= 100 mA

I_F= 200 mA

200

250

VR=100V

VR=150V

VR=200V

I_R

Reverse leakage current

Forward voltage

0.1

1.00

1.25

5.0

V_F

V_R= 0 , f = 1.0 MHz

(Note 1)

C_j

Junction capacitance

Reverse Recovery Time

Trr

Note 1 : Test condition : I_F= I_R= 30mA , R_L=100Ω , I_RR=3mA

Version : A13

Document Number：DS_S1310006

中文翻译

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