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BAV20W-G3-08 PDF预览

BAV20W-G3-08

更新时间: 2024-09-16 14:47:59
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
5页 102K
描述
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, GREEN PACKAGE-2

BAV20W-G3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:5.07
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.41 W
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAV20W-G3-08 数据手册

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BAV19W-G, BAV20W-G, BAV21W-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diodes  
• For general purpose  
• AEC-Q101 qualified  
• Base P/N-G3 - green, commercial grade  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912   
MECHANICAL DATA  
Case: SOD-123  
Weight: approx. 9.4 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
TYPE  
MARKING  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
REMARKS  
BAV19W-G  
BAV20W-G  
BAV21W-G  
VR = 100 V  
VR = 150 V  
VR = 200 V  
BAV19W-G3-08 or BAV19W-G3-18  
BAV20W-G3-08 or BAV20W-G3-18  
BAV21W-G3-08 or BAV21W-G3-18  
AS  
AT  
AU  
Single diode  
Single diode  
Single diode  
Tape and reel  
Tape and reel  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
VALUE  
100  
UNIT  
BAV19W-G  
BAV20W-G  
BAV21W-G  
BAV19W-G  
BAV20W-G  
BAV21W-G  
VR  
V
V
Continuous reverse voltage  
VR  
150  
VR  
200  
V
VRRM  
VRRM  
VRRM  
IF  
120  
V
Repetitive peak reverse voltage  
DC Forward current (1)  
200  
V
250  
V
250  
mA  
Rectified current (average) half  
IF(AV)  
200  
mA  
wave rectification with resist. load (1)  
Repetitive peak forward current (1)  
f 50 Hz  
IFRM  
IFSM  
Ptot  
625  
1
mA  
A
Surge forward current  
Power dissipation (1)  
t < 1 s  
410  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
375  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air (1)  
Junction temperature (1)  
150  
Storage temperature range (1)  
Tstg  
- 65 to + 150  
- 55 to + 150  
°C  
Operating temperature range  
Top  
°C  
Note  
(1)  
Valid provided that leads are kept at ambient temperature  
Rev. 1.3, 13-May-13  
Document Number: 85188  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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