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BAV19 PDF预览

BAV19

更新时间: 2024-10-31 22:48:11
品牌 Logo 应用领域
威世 - VISHAY 信号二极管
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4页 145K
描述
Small Signal Diodes

BAV19 数据手册

 浏览型号BAV19的Datasheet PDF文件第2页浏览型号BAV19的Datasheet PDF文件第3页浏览型号BAV19的Datasheet PDF文件第4页 
BAV19 THRU BAV21  
Small Signal Diodes  
FEATURES  
DO-35  
Silicon Epitaxial Planar Diodes  
For general purpose  
These diodes are also available in other  
case styles including: the SOD-123 case  
with the type designation BAV19W - BAV21W,  
the MiniMELF case with the type designation  
BAV101 - BAV103, and the SOT-23 case with the  
type designation BAS19 - BAS21.  
max.  
.079 (2.0)  
Cathode  
Mark  
max. .020 (0.52)  
MECHANICAL DATA  
Case: DO-35 Glass Case  
Weight: approx. 0.13 g  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
Reverse Voltage  
BAV19  
BAV20  
BAV21  
V
R
V
R
V
R
120  
200  
250  
V
V
V
Forward DC Current at T  
= 25 °C  
I
2501)  
2001)  
mA  
mA  
amb  
F
0
Rectified Current (Average)  
Half Wave Rectification with Resist. Load  
50 Hz  
I
at T  
= 25 °C and f  
amb  
Repetitive Peak Forward Current  
50 Hz, Θ = 180 °, T = 25 °C  
I
I
6251)  
mA  
FRM  
at f  
amb  
Surge Forward Current at t < 1 s, T = 25 °C  
1
A
j
FSM  
Power Dissipation at T  
= 25 °C  
P
5001)  
mW  
°C  
°C  
amb  
tot  
S
Junction Temperature  
Storage Temperature Range  
T
j
1751)  
T
–65 to +1751)  
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case  
4/98  

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