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BAV19 PDF预览

BAV19

更新时间: 2024-11-01 06:41:31
品牌 Logo 应用领域
商升特 - SEMTECH 二极管局域网
页数 文件大小 规格书
4页 263K
描述
SILICON EPITAXIAL PLANAR DIODES

BAV19 数据手册

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BAV19, BAV20, BAV21  
SILICON EPITAXIAL PLANAR DIODES  
High Voltage General Purpose Diodes  
Max. 0.5  
Min. 27.5  
Max. 3.9  
Min. 27.5  
Max. 1.9  
Black  
Cathode Band  
Black  
Part No.  
Black  
"ST" Brand  
XXX  
ST  
Glass Case DO-35  
Dimensions in mm  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VRRM  
Value  
Unit  
V
BAV19  
BAV20  
BAV21  
120  
200  
250  
Repetitive Peak Reverse Voltage  
BAV19  
BAV20  
BAV21  
100  
150  
200  
Reverse Voltage  
VR  
V
Continuous Forward Current  
IF  
250  
625  
mA  
mA  
Repetitive Peak Forward Current  
IFRM  
at t = 1 µs  
at t = 100 µs  
at t = 1 s  
9
3
1
Non-repetitive Peak Forward Surge Current  
IFSM  
A
Total Power Dissipation  
Ptot  
RθJA  
RθJTP  
Tj  
500  
375  
mW  
K/W  
K/W  
Thermal Resistance, Junction to Ambient 1)  
Thermal Resistance, Junction to Tie-point 1)  
Junction Temperature  
240  
O
C
175  
O
C
Storage Temperature Range  
1) Lead length 10 mm  
TS  
- 65 to + 175  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 20/06/2007  

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