生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.69 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最大输出电流: | 0.2 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.4 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 60 V | 最大反向恢复时间: | 0.05 µs |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAV18S | DIODES |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon |
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BAV18-T | DIODES |
获取价格 |
Rectifier Diode, 1 Element, 0.2A, 60V V(RRM), Silicon |
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BAV18-T | RECTRON |
获取价格 |
SIGNAL DIODE, |
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BAV18T/R | NXP |
获取价格 |
DIODE 0.25 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode |
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BAV18T26A | TI |
获取价格 |
60V, SILICON, SIGNAL DIODE |
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BAV18T26R | TI |
获取价格 |
60V, SILICON, SIGNAL DIODE |
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BAV18T50A | TI |
获取价格 |
60V, SILICON, SIGNAL DIODE |
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BAV18T50R | TI |
获取价格 |
60V, SILICON, SIGNAL DIODE |
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BAV18-TAP | VISHAY |
获取价格 |
Small Signal Switching Diodes, High Voltage |
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BAV18-TR | VISHAY |
获取价格 |
Small Signal Switching Diodes, High Voltage |
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