5秒后页面跳转
BAT85S_15 PDF预览

BAT85S_15

更新时间: 2024-11-02 01:24:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 72K
描述
Small Signal Schottky Diode

BAT85S_15 数据手册

 浏览型号BAT85S_15的Datasheet PDF文件第2页浏览型号BAT85S_15的Datasheet PDF文件第3页浏览型号BAT85S_15的Datasheet PDF文件第4页 
BAT85S  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• Integrated protection ring against static  
discharge  
• Very low forward voltage  
• AEC-Q101 qualified  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
• Applications where a very low forward voltage is required  
MECHANICAL DATA  
Case: DO-35  
Weight: approx. 125 mg  
Cathode band color: black  
Packaging codes/options:  
TR/10K per 13" reel (52 mm tape), 50K/box  
TAP/10K per ammopack (52 mm tape), 50K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
BAT85S  
BAT85S-TR or BAT85S-TAP  
Single diode  
BAT85S  
Tape and reel/ammopack  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
V
Reverse voltage  
VR  
30  
5
Peak forward surge current  
Repetitive peak forward current  
Forward continuous current  
tp 10 ms  
IFSM  
IFRM  
IF  
A
tp < 1 s  
300  
200  
mA  
mA  
PCB mounting, I = 4 mm;  
Average forward current  
IFAV  
200  
mA  
VRWM = 25 V, Tamb = 50 °C  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
350  
UNIT  
K/W  
°C  
Thermal resistance junction to ambient air  
Junction temperature  
I = 4 mm, TL = constant  
125  
Storage temperature range  
Tstg  
- 65 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
IF = 0.1 mA  
IF = 1 mA  
SYMBOL  
MIN.  
TYP.  
MAX.  
240  
320  
400  
500  
800  
2
UNIT  
VF  
VF  
VF  
VF  
VF  
IR  
mV  
mV  
mV  
mV  
mV  
μA  
Forward voltage  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
Reserve current  
VR = 25 V  
Diode capacitance  
Reserve recovery time  
V
R = 1 V, f = 1 MHz  
CD  
trr  
10  
pF  
IF = 10 mA to IR = 10 mA to iR = 1 mA  
5
ns  
Rev. 1.8, 06-May-13  
Document Number: 85513  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与BAT85S_15相关器件

型号 品牌 获取价格 描述 数据表
BAT85S-TAP VISHAY

获取价格

Small Signal Schottky Diode
BAT85S-TR VISHAY

获取价格

Small Signal Schottky Diode
BAT85T/R NXP

获取价格

0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2
BAT85T/R PHILIPS

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM),
BAT85-TAP VISHAY

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
BAT85-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
BAT85-TP-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
BAT85-TR VISHAY

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
BAT86 NXP

获取价格

Schottky barrier diode
BAT86 VISHAY

获取价格

Schottky Diodes