BAT85S
Vishay Semiconductors
www.vishay.com
Small Signal Schottky Diode
FEATURES
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
BAT85S
BAT85S-TR or BAT85S-TAP
Single diode
BAT85S
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
VR
30
5
Peak forward surge current
Repetitive peak forward current
Forward continuous current
tp 10 ms
IFSM
IFRM
IF
A
tp < 1 s
300
200
mA
mA
PCB mounting, I = 4 mm;
Average forward current
IFAV
200
mA
VRWM = 25 V, Tamb = 50 °C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
350
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
I = 4 mm, TL = constant
125
Storage temperature range
Tstg
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 0.1 mA
IF = 1 mA
SYMBOL
MIN.
TYP.
MAX.
240
320
400
500
800
2
UNIT
VF
VF
VF
VF
VF
IR
mV
mV
mV
mV
mV
μA
Forward voltage
IF = 10 mA
IF = 30 mA
IF = 100 mA
Reserve current
VR = 25 V
Diode capacitance
Reserve recovery time
V
R = 1 V, f = 1 MHz
CD
trr
10
pF
IF = 10 mA to IR = 10 mA to iR = 1 mA
5
ns
Rev. 1.8, 06-May-13
Document Number: 85513
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000