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BAT85_11

更新时间： 2024-01-04 01:37:04
品牌 Logo 应用领域
美微科 - MCC 小信号肖特基二极管
页数 文件大小 规格书
2页 352K
描述
SMALL SIGNAL SCHOTTKY DIODES

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中文翻译

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BAT85_11 数据手册

 浏览型号BAT85_11的Datasheet PDF文件第2页 
M C C  
BAT85  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
SMALL SIGNAL  
SCHOTTKY  
DIODES  
Features  
•
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
•
•
For general purpose applications  
These diodes features very low turn-on voltage and fast switching.  
These devices are protected by a PN junction guard ring against  
excessive voltage,such as electrostatic discharges.  
This diode is also available in the Mini-MELF case with type  
designation LL85.  
•
ꢀꢁꢂꢃꢄ  
•
Moisture Sensitivity Level 1  
MECHANICAL DATA  
•
•
•
Case: Do-35 glass case  
ꢂꢁꢀꢆꢅꢄꢌꢍꢁꢃꢇ  
ꢉꢎꢏ  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ꢀꢁꢀꢍꢐꢄꢌꢁꢀꢇ  
ꢉꢊꢋ  
ꢑꢎꢊ  
ꢀꢁꢂꢃꢀꢄꢅꢁꢆꢇ  
ꢈꢈꢈꢈꢉꢊꢋ  
ABSOLUTE RATINGS(LIMITING VALUES)  
Symbols Value  
Units  
V
Repetitive Peak Reverse Voltage  
VR  
IF  
30  
Forward Continuous Current at T =250C  
200  
mA  
mA  
mA  
mW  
0C  
ꢂꢁꢀꢆꢅꢄꢌꢍꢁꢃꢇ  
ꢉꢎꢏ  
Repetitive Peak Forward Current at t<1s, ä< 0.5,T=250C IFM  
300  
Surge forward current at tp<10mS , T=250C  
Power Dissipation at T=650C  
Junction temperature  
IFSM  
600  
ꢀꢁꢀꢌꢀꢄꢀꢁꢃꢌꢇ  
ꢉꢊꢋ  
ꢑꢎꢊ  
Ptot  
TJ  
200  
125  
Dimensions in inches and (millimeters)  
Ambient Operating temperature Range  
Storage Temperature Range  
TA  
-55~+125  
-55~+150  
0C  
TSTG  
0C  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
Reverse breakdown voltage Tested with 100  
µ
A pulses  
30  
V
V
(BR)R  
F
F
F
F
F
V
Forward voltage  
Pulse Test t  
p
µ δ  
300 s, 2%  
V
V
V
V
V
at I  
at I  
at I  
at I  
at I  
F
F
F
F
F
=0.1mA,  
0.24  
V
=1mA,  
0.32  
V
=10mA,  
=30mA,  
=100mA  
0.4  
V
0.50  
V
0.8  
Leakage current  
Junction Capacitance at V  
Reverse recovery time Form I  
Thermal resistance junction to ambient Air  
R
V =25V  
2
µ
A
R
I
C
10  
pF  
ns  
R
=1V ,f=1MHz  
R
=10mA,I =10mA,I =1mA  
J
F
R
5
trr  
θ
JA  
ꢀꢁ  
300  
K/W  
R
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)  
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  
12

中文翻译

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