Datasheet > BAT854W-Q

BAT854W-Q

更新时间： 2024-09-27 11:13:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	183K
描述
40 V, 200 mA Schottky barrier diodeProduction

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BAT854W-Q 数据手册

BAT854W-Q

40 V, 200 mA Schottky barrier diode

19 July 2022

Product data sheet

1. General description

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a

very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Very low forward voltage

•

Very low reverse current

Guard ring protected

Very small SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Ultra high-speed switching

Voltage clamping

Protection circuits

Blocking diodes

Low power consumption applications (e.g. hand-held applications)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V_R

I_F

reverse voltage

forward current

forward voltage

reverse current

200

550

0.5

µA

V_F

I_R

I_F= 100 mA; T_amb= 25 °C

V_R= 25 V; t_p= 300 µs; δ = 0.02; pulsed;

T_amb= 25 °C

12 3 4 5 6 7 8

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