Datasheet > BAT854SW

BAT854SW

更新时间： 2024-09-26 14:54:39

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	189K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAT854SW 数据手册

BAT854W/AW/CW/SW

Surface Mount Schottky Barrier Diodes

Features

• Low forward voltage

• Very low reverse current

BAT854CW BAT854SW

Applications

BAT854W

BAT854AW

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F(AV)

I_FRM

I_FSM

T_J

200

300

Average Rectified Forward Current

Repetitive Peak Forward Current (tp ≤ 1 s)

Peak Forward Surge Current (t = 8.3 ms half sinewave)

Junction Temperature

150

℃

Storage Temperature Range

T_stg

- 65 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 μA

Forward Voltage

at I_F= 30 mA

at I_F= 100 mA

V_F

420

550

Reverse Current

at V_R= 25 V

I_R

0.5

µA

Total Capacitance

at V_R= 1 V, f = 1 MHz

C_T

1 / 3

Dated: 25/07/2022 Rev: 02

12 3

中文翻译

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