Datasheet > BAT854SW

BAT854SW

更新时间： 2024-09-25 06:41:31

品牌	Logo	应用领域
科信 - KEXIN		二极管
页数	文件大小	规格书
1页	46K
描述
Schottky barrier (double) diodes

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中文翻译

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数据手册

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BAT854SW 数据手册

SMD Type

Diodes

Schottky barrier (double) diodes

BAT854W;BAT854AW

BAT854CW;BAT854SW

Features

Very low forward voltage

Very low reverse current

Guard ring protected

Very small SMD package.

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Continuous forward current

Repetitive peak forward current

Non-repetitive peak forward current

Storage temperature

Symbol

V^R

Conditions

Min

Max

Unit

I^F

200

300

I^FRM

I^FSM

T^stg

tp 1 s; d 0.5

t = 8.3 ms half sinewave;JEDEC method

-65

+150

150

+150

625

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

I^F= 0.1 mA

Typ

Max

Unit

200

260

340

I^F= 1 mA

Forward voltage

V^F

I^F= 10 mA

I^F= 30 mA

420

I^F= 100 mA

550

0.5

Continuous reverse current

Diode capacitance

Note

I^R

VR = 25 V; Note 1

f = 1 MHz; VR = 1 V

C^d

1. Pulse test: t^p

300 s; ä

0.02.

Marking

Type

BTA854W

BAT854AW

BAT854CW

BAT854SW

Marking

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