Datasheet > BAT750(KAT750)

BAT750(KAT750)

更新时间： 2024-11-13 18:09:55

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描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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BAT750(KAT750) 数据手册

SMD Type

0.75 Surface Mount Schottky Barrier Rectifier

Diodes

KAT750^(BAT750)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Very Low Forward Voltage Drop

High Conductance

For Use in DC-DC Converter, PCMCIA,

and Mobile Telecommunications Applications

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

RMS reverse voltage

VR(RMS)

Average rectified output current

0.75

Non-Repetitive Peak Forward Surge Current

8.3ms single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

5.5

Power dissipation

350

286

Typical Thermal Resistance Junction to Ambient

Operating and storage temperature range

RèJA

Tj,Tstg

-40 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Reverse Breakdown Voltage

V(BR)R

IR = 300

IF = 50mA

225

235

290

340

390

420

475

280

310

350

420

490

540

650

100

IF = 100mA

IF = 250mA

IF = 500mA

IF = 750mA

Forwarad voltage

IF = 1000mA

IF = 1500mA

VR = 15V

Leakage current

VR = 0, f = 1.0MHz

175

Junction Capacitance

VR = 25V, f = 1.0MHz

Marking

K77 or K79

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