Datasheet > BAT721WS-AH

BAT721WS-AH

更新时间： 2024-09-24 14:55:23

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	133K
描述
肖特基二极管

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中文翻译

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数据手册

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BAT721WS-AH 数据手册

BAT721WS-AH

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• AEC-Q101 Qualified

• Low forward voltage

• Low capacitance

• Halogen and Antimony Free(HAF),

RoHS compliant

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

I_F(AV)

Average Rectified Forward Current

Non-Repetitive Peak Forward Surge Current (8.3 ms)

Junction Temperature

200

I_FSM

T_j

125

℃

Storage Temperature Range

T_stg

- 65 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

at I_F= 200 mA

300

420

550

V_F

Reverse Current

at V_R= 30 V

at V_R= 30 V,T_J= 100℃

I_R

µA

Diode Capacitance

at V_R= 0 V, f = 1 MHz

C_d

1 / 3

Dated：02/05/2023 Rev: 02

12 3

中文翻译

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