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BAT68W

更新时间: 2024-11-11 06:41:31
品牌 Logo 应用领域
科信 - KEXIN 肖特基二极管光电二极管
页数 文件大小 规格书
1页 47K
描述
Silicon Schottky Diodes

BAT68W 数据手册

  
SMD Type  
Diodes  
Silicon Schottky Diodes  
BAT68W  
Features  
For mixer applications in the VHF/UHF range  
For high speed switching  
Absolute Maximum Ratings Ta = 25  
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
VR  
Value  
8
Unit  
V
IF  
150  
mA  
mW  
Ptot  
Tj  
150  
Total power dissipation  
Junction temperature  
TS = 97  
150  
Operating temperature range  
Storage temperature  
Top  
-65 to+150  
-65 to+150  
435  
Tstg  
RthJA  
RthJS  
Junction - ambient (Note 1)  
Junction - soldering point  
K/W  
K/W  
355  
Electrical Characteristics Ta = 25  
Parameter  
Breakdown voltage  
Symbol  
V(BR)  
Conditions  
I(BR) = 100 µA  
Min  
8
Typ  
Max  
Unit  
V
0.1  
1.2  
340  
500  
1
VR = 1 V, TA = 25  
VR = 1 V, TA = 60  
IF = 1 mA  
Reverse current  
Forward voltage  
IR  
A
318  
390  
VF  
mV  
pF  
IF = 10 mA  
340  
Diode capacitance  
CT  
RF  
VR = 1 V, f = 1 MHz  
IF = 5 mA  
Differential forward resistance  
10  
Marking  
Marking  
83s  
1
www.kexin.com.cn  

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