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BAT68-04E6433 PDF预览

BAT68-04E6433

更新时间: 2024-11-20 15:28:35
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
5页 100K
描述
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon,

BAT68-04E6433 技术参数

生命周期:Active包装说明:R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.14
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大二极管电容:1 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
最大正向电压 (VF):0.34 V频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.15 W认证状态:Not Qualified
最大重复峰值反向电压:8 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAT68-04E6433 数据手册

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