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BAT64-05W PDF预览

BAT64-05W

更新时间: 2024-11-12 22:50:19
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管光电二极管仪表
页数 文件大小 规格书
6页 73K
描述
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)

BAT64-05W 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.54
Is Samacsys:N配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJESD-30 代码:R-PDSO-G3
湿度敏感等级:1最大非重复峰值正向电流:0.8 A
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.12 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAT64-05W 数据手册

 浏览型号BAT64-05W的Datasheet PDF文件第2页浏览型号BAT64-05W的Datasheet PDF文件第3页浏览型号BAT64-05W的Datasheet PDF文件第4页浏览型号BAT64-05W的Datasheet PDF文件第5页浏览型号BAT64-05W的Datasheet PDF文件第6页 
BAT 64...W  
Silicon Schottky Diodes  
3
For low-loss, fast-recovery, meter protection,  
bias isolation and clamping applications  
Integrated diffused guard ring  
Low forward voltage  
2
1
VSO05561  
BAT 64W  
BAT 64-04W  
BAT 64-05W  
BAT 64-06W  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BAT 64W  
63s  
Q62702-A1159  
Q62702-A1160  
Q62702-A1161  
Q62702-A1162  
1 = A  
2 n.c.  
3 = C  
SOT-323  
BAT 64-04W 64s  
BAT 64-05W 65s  
BAT 64-06W 66s  
1 = A1  
1 = A1  
1 = C1  
2 = C2  
2 = A2  
2 = C2  
3 = C1/A2  
3 = C1/2  
3 = A1/2  
Maximum Ratings  
Parameter  
Symbol  
Value  
40  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
250  
mA  
I
F
Average forward current (50/60Hz, sinus)  
120  
I
FAV  
800  
Surge forward current (t< 100µs)  
I
FSM  
250  
mW  
°C  
Total power dissipation  
BAT 64W, T 120°C P  
S
tot  
tot  
tot  
250  
Total power dissipat. BAT64-04/06W, T 111°C P  
S
250  
Total power dissipation BAR 64-05W, T 104°C P  
S
Junction temperature  
Storage temperature  
150  
T
j
-55...+150  
T
stg  
Semiconductor Group  
Semiconductor Group  
1
Sep-07-1998  
1998-11-01  
1

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