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BAT6307WH6327XTSA1 PDF预览

BAT6307WH6327XTSA1

更新时间: 2024-11-13 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
9页 884K
描述
Mixer Diode, Low Barrier, Silicon, ROHS COMPLIANT PACKAGE-4

BAT6307WH6327XTSA1 技术参数

生命周期:Obsolete包装说明:R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60Factory Lead Time:1 week
风险等级:5.81Is Samacsys:N
其他特性:HIGH SPEED外壳连接:CATHODE
配置:SEPARATE, 2 ELEMENTS最大二极管电容:0.85 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
JESD-30 代码:R-PDSO-G4元件数量:2
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.1 W
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
肖特基势垒类型:LOW BARRIERBase Number Matches:1

BAT6307WH6327XTSA1 数据手册

 浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第2页浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第3页浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第4页浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第5页浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第6页浏览型号BAT6307WH6327XTSA1的Datasheet PDF文件第7页 
BAT63...  
Silicon Schottky Diode  
Low barrier diode for detectors up to GHz  
frequencies  
For high-speed applications  
Zero bias detector diode  
Pb-free (RoHS compliant) package  
BAT63-02V  
BAT63-07W  
4
3
D
1
D
2
1
2
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BAT63-02V  
BAT63-07W  
Package  
SC79  
SOT343  
Configuration  
single  
parallel pair  
L (nH) Marking  
S
0.6  
1.6  
d
63s  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
Value  
3
100  
Unit  
V
mA  
mW  
V
R
I
F
Total power dissipation  
P
tot  
T 120°C, BAT63-02V  
100  
100  
150  
S
T 114°C, BAT63-07W  
S
°C  
Junction temperature  
Storage temperature  
T
j
T
-55 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
BAT63-02V  
Symbol  
R
thJS  
Value  
Unit  
K/W  
1)  
295  
355  
BAT63-07W  
2011-06-15  
1

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