Datasheet > BAT63-07WE6811

BAT63-07WE6811

更新时间： 2024-02-02 21:22:55

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
4页	434K
描述
Silicon Schottky Diode

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BAT63-07WE6811 数据手册

BAT63-07WE6811

Silicon Schottky Diode

Low barrie diode for detectors up to GHz

frequencies

For high-speed switching applications

Zero bias detector diode

BAT63-07W

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Package

Configuration

L (nH) Marking

BAT63-07WE6811

SOT343

parallel pair

1.6

63s

Maximum Ratings

Parameter

Diode reverse voltage

Forward current

Symbol

Value

100

Unit

Total power dissipation

tot

103 °C

150

-55 ... 150

°C

Junction temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

Unit

K/W

470

thJS

¹For calculation of R_thJAplease refer to Application Note Thermal Resistance

Jul-24-2002

12 3 4

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