是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | Factory Lead Time: | 6 weeks |
风险等级: | 1.78 | Samacsys Description: | Schottky Diodes & Rectifiers RF DIODES |
配置: | SINGLE | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1 V | JESD-609代码: | e3 |
元件数量: | 1 | 最高工作温度: | 150 °C |
最大输出电流: | 0.02 A | 最大重复峰值反向电压: | 40 V |
子类别: | Rectifier Diodes | 表面贴装: | YES |
技术: | SCHOTTKY | 端子面层: | Matte Tin (Sn) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BAT62-02W | INFINEON |
获取价格 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) | |
BAT62-02W-E6327 | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), | |
BAT62-02W-E6433 | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), | |
BAT62-02W-H6327 | INFINEON |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), | |
BAT6202WH6327XTSA1 | INFINEON |
获取价格 |
Mixer Diode, Low Barrier, Ultra High Frequency, Silicon, HALOGEN FREE AND ROHS COMPLIANT, | |
BAT62-03W | TYSEMI |
获取价格 |
Low Barrier diode for detectors up to GHz frequencies | |
BAT62-03W | INFINEON |
获取价格 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) | |
BAT62-03W | KEXIN |
获取价格 |
Silicon Schottky Doide | |
BAT6203WE6327 | INFINEON |
获取价格 |
Low barrier diode for detectors up to GHz frequencies | |
BAT62-03WE6327 | INFINEON |
获取价格 |
Mixer Diode, Low Barrier, Silicon |