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BAT62

更新时间: 2024-11-25 12:53:47
品牌 Logo 应用领域
TYSEMI 二极管光电二极管
页数 文件大小 规格书
1页 60K
描述
Low barrier diode for detectors up to GHz frequencies.

BAT62 数据手册

  
Product specification  
BAT62  
Unit: mm  
Features  
Low barrier diode for detectors up to GHz frequencies.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Reverse voltage  
Symbol  
VR  
Value  
40  
Unit  
V
Forward current  
IF  
20  
mA  
mW  
Ptot  
100  
Total power dissipation, TS  
Junction temperature  
85  
Tj  
150  
Storage temperature range  
Tstg  
Rth JA  
Rth JS  
-55 to + 150  
810  
Junction - ambient1)  
Junction - soldering point  
Note  
K/W  
K/W  
650  
1.Package mounted on alumina 15 mm  
16.7 mm  
0.7 mm.  
Electrical Characteristics Ta = 25  
Parameter  
Reverse current  
Symbol  
IR  
Test Condition  
VR = 40 V  
Min  
Typ  
Max  
10  
Unit  
A
Forward voltage  
IF  
IF = 2 mA  
0.58  
0.35  
0.1  
225  
2
1
V
Diode capacitance  
Case capacitance  
Differential resistance  
Series inductance  
CT  
f = 1 MHz; VR = 0  
0.6  
pF  
pF  
CC  
RO  
LS  
VR = 0, f = 10 KHz  
K
nH  
Marking  
Marking  
62  
1 of 1  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  

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