Datasheet > BAT62

BAT62

更新时间： 2024-09-25 08:48:51

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	36K
描述
Silicon Schottky Diode

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中文翻译

获取价格

数据手册

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BAT62 数据手册

SMD Type

Diodes

Silicon Schottky Diode

BAT62

Unit: mm

Features

Low barrier diode for detectors up to GHz frequencies.

Absolute Maximum Ratings Ta = 25

Parameter

Reverse voltage

Symbol

V^R

Value

Unit

Forward current

I^F

Ptot

100

Total power dissipation, T^S

Junction temperature

T^j

150

Storage temperature range

Tstg

Rth JA

R^{th JS}

-55 to + 150

810

Junction - ambient¹⁾

Junction - soldering point

Note

K/W

650

1.Package mounted on alumina 15 mm

16.7 mm

0.7 mm.

Electrical Characteristics Ta = 25

Parameter

Reverse current

Symbol

I^R

Test Condition

VR = 40 V

Min

Typ

Max

Unit

Forward voltage

I^F

IF = 2 mA

0.58

0.35

0.1

225

Diode capacitance

Case capacitance

Differential resistance

Series inductance

C^T

f = 1 MHz; VR = 0

0.6

C^C

R^O

VR = 0, f = 10 KHz

Marking

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中文翻译

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