5秒后页面跳转
BAT60JFILM PDF预览

BAT60JFILM

更新时间: 2024-11-24 22:31:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管光电二极管PC
页数 文件大小 规格书
5页 61K
描述
SMALL SIGNAL SCHOTTKY DIODE

BAT60JFILM 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:PLASTIC, SMD, 2PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:15 weeks
风险等级:1.59Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:179127
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD-323
Samacsys Released Date:2015-11-13 09:54:32Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.32 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:5 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.31 W认证状态:Not Qualified
最大重复峰值反向电压:10 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAT60JFILM 数据手册

 浏览型号BAT60JFILM的Datasheet PDF文件第2页浏览型号BAT60JFILM的Datasheet PDF文件第3页浏览型号BAT60JFILM的Datasheet PDF文件第4页浏览型号BAT60JFILM的Datasheet PDF文件第5页 
BAT60J  
SMALL SIGNAL SCHOTTKY DIODE  
FEATURES AND BENEFITS  
60  
A
K
n
n
n
n
n
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD VOLTAGE DROP  
EXTREMELY FAST SWITCHING  
SURFACE MOUNTED DEVICE  
DESCRIPTION  
Schottky barrier diode encapsulated in a SOD-323  
small SMD package.  
This device is intended for use in portable  
equipments. It is suited for DC to DC converters,  
step-up conversion and power management.  
SOD-323  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
10  
Peak forward current  
δ = 0.11  
3
A
IFSM  
Ptot  
Surge non repetitive forward current  
Power Dissipation  
tp=10ms  
5
310  
A
Ta=25°C  
mW  
°C  
°C  
°C  
Tstg  
Tj  
Storage temperature range  
- 65 to +150  
150  
Maximum operating junction temperature *  
Maximum temperature for soldering during 10s  
TL  
260  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
Unit  
Rth (j-a) Junction to ambient (*)  
400  
°C/W  
(*) Mounted on epoxy board with recommended pad layout.  
May 2000 - Ed: 4A  
1/5  

BAT60JFILM 替代型号

型号 品牌 替代类型 描述 数据表
PMEG1020EA,115 NXP

功能相似

PMEG1020EA - 2 A ultra low VF MEGA Schottky barrier rectifier SOD 2-Pin

与BAT60JFILM相关器件

型号 品牌 获取价格 描述 数据表
BAT60WS VISHAY

获取价格

Mixer Diode, Ultra High Frequency, Silicon
BAT60WS SWST

获取价格

肖特基整流管
BAT60WS/D5 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 3A, 10V V(RRM),
BAT60WS/D6 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 3A, 10V V(RRM),
BAT60WS/L5/D5 VISHAY

获取价格

DIODE SILICON, UHF BAND, MIXER DIODE, MICRO MINIATURE, PLASTIC, SOD-323, 2 PIN, Microwave
BAT60WS/L5/D6 VISHAY

获取价格

DIODE SILICON, UHF BAND, MIXER DIODE, MICRO MINIATURE, PLASTIC, SOD-323, 2 PIN, Microwave
BAT62 INFINEON

获取价格

Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)
BAT62 KEXIN

获取价格

Silicon Schottky Diode
BAT62 TYSEMI

获取价格

Low barrier diode for detectors up to GHz frequencies.
BAT62_07 INFINEON

获取价格

Silicon Schottky Diode