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BAT54TSDW-TP PDF预览

BAT54TSDW-TP

更新时间: 2024-02-06 22:44:21
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 103K
描述
Rectifier Diode, Schottky, 4 Element, 0.2A, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

BAT54TSDW-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.55配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
元件数量:4端子数量:6
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAT54TSDW-TP 数据手册

 浏览型号BAT54TSDW-TP的Datasheet PDF文件第2页浏览型号BAT54TSDW-TP的Datasheet PDF文件第3页 
M C C  
BAT54TW/ADW/  
CDW/SDW/BRW  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
xꢀ Low Forward Voltage Drop  
xꢀ Fast Switching  
xꢀ Ultra-Small Surface Mount Package  
200mWatt, 30Volt  
Schottky Barrier Diode  
xꢀ PN Junction Guard Ring for Transient and ESD Protection  
xꢀ Available in Lead Free Version  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
SOT-363  
Continuos Reverse Voltage  
VR  
IF  
30V  
200mA  
A
Forward Continuous Current  
Repetitive Peak Forward Current  
Peak Forward Current t<1s  
IFRM  
IFSM  
PD  
300mA  
C
B
600mA  
Power Dissipation @ TA = 25к  
Thermal Resistance , Junction to Ambient  
Storage Temperature Range  
Operating Temperature Range  
200mW  
G
H
625к/W  
-65к to 125к  
-65к to 125к  
RșJA  
Tstg  
Tj  
K
J
J
D
F
M
Electrical Characteristics @ 25qC Unless Otherwise Specified  
DIMENSIONS  
INCHES  
MM  
Ratings  
Forward Voltage at  
IF = 0.1mA  
Symbol  
Max.  
Notes  
DIM  
MIN  
MAX  
0.010  
0.053  
0.087  
MIN  
0.10  
1.15  
2.00  
MAX  
0.30  
1.35  
2.20  
NOTE  
A
B
C
D
F
0.004  
0.045  
0.079  
240mV  
320mV  
400mV  
500mV  
1000mV  
IF = 1mA  
IF = 10mA  
IF = 30mA  
IF = 100mA  
0.026 Nominal  
0.65 Nominal  
Note 1  
0.010  
0.071  
---  
0.016  
0.30  
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
H
J
0.087  
0.004  
0.039  
0.016  
0.010  
1.80  
---  
VF  
K
L
0.035  
0.010  
0.004  
0.90  
0.25  
0.10  
M
Reverse Current  
IR  
V(BR)  
CJ  
VR = 25V  
2.0PA  
Reverse Breakdown  
Voltage  
>30V  
10pF  
Measured at  
1.0MHz, VR=1.0V  
Capacitance  
Reverse Recovery  
Time  
IF=IR=10mA;  
REC=1mA,RL=100ȍ  
trr  
5.0nS  
I
Note 1 :Short duration test pulse used to minimize self-heating effect  
www.mccsemi.com  
Revision: 3  
2008/01/01  
2 of 3  

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