Datasheet > BAT54SWT1

BAT54SWT1

更新时间： 2024-11-27 22:16:47

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	62K
描述
Dual Series Schottky Barrier Diodes

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中文翻译

获取价格

数据手册
替代型号

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BAT54SWT1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Series Schottky

Barrier Diodes

BAT54SWT1

30 VOLTS DUAL SERIES

SCHOTTKY AND BARRIER

DIODES

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low forward

voltage reduces conduction loss. Miniature surface mount package is excel-

lent for hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ I _F= 10 mAdc

CASE 419, STYLE 9

SOT–323 (SC–70)

ORDERING INFORMATION

CATHODE

ANODE

Device

Package

Shipping

BAT54SWT1

SOT–323

3000/Tape & Reel

CATHODE/ANODE

Preferred: devices are recommended choices for future use and best overall value.

DEVICE MARKING

BAT54LT1 = B8

MAXIMUM RATINGS (T _J= 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

V _R

P _F

Volts

Forward Power Dissipation

@ T _A= 25°C

200

1.6

mW/°C

Derate above 25°C

Forward Current(DC)

Junction Temperature

Storage Temperature Range

I_F

200Max

125Max

–55 to +150

T _J

°C

T _stg

°C

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol

V_(BR)R

C_T

Min

—

Typ

Max

—

Unit

Volts

Reverse Breakdown Voltage (I _R= 10 µA)

Total Capacitance (V _R= 1.0 V, f = 1.0 MHz)

Reverse Leakage (V _R= 25 V)

—

7.6

I_R

—

0.5

2.0

0.24

0.5

0.8

µAdc

Vdc

Forward Voltage (I _F= 0.1 mAdc)

Forward Voltage (I _F= 30 mAdc)

Forward Voltage (I _F= 100 mAdc)

Reverse Recovery Time

V_F

—

0.22

0.41

0.52

V_F

—

V_F

—

t_rr

—

5.0

(I _F= I _R= 10 mAdc, I _R(REC)= 1.0 mAdc, Figure 1)

Forward Voltage (I _F= 1.0 mAdc)

Forward Voltage (I _F= 10 mAdc)

Forward Current (DC)

V_F

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

I_F

mAdc

Repetitive Peak Forward Current

Non–Repetitive Peak Forward Current (t < 1.0 s)

I_FRM

I_FSM

—

BAT54SWT1–1/2

中文翻译

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BAT54SWT1 替代型号

型号	品牌	替代类型	描述	数据表
BAT54SWT1	ONSEMI	功能相似	DUAL SERIES SCHOTTKY BARRIER DIODES

与BAT54SWT1相关器件

型号	品牌	获取价格	描述	数据表
BAT54SW-T1	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT54SWT1/D	ETC	获取价格	Dual Series Schottky Barrier Diode
BAT54SWT1G	ONSEMI	获取价格	Dual Series Schottky Barrier Diodes
BAT54SWT1G	FAIRCHILD	获取价格	Schottky Diodes
BAT54SW-T1-LF	WTE	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC P
BAT54SWT3	ONSEMI	获取价格	2 ELEMENT, SILICON, SIGNAL DIODE, SC-70, 3 PIN
BAT54SW-T3	WTE	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT54SWTF2	YANGJIE	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon,
BAT54SWTHE3	MCC	获取价格	Tape : 3K/Reel, 120K/Ctn;
BAT54SWTHQ	YANGJIE	获取价格	SOT-323